t4 - lds - 0223, rev . 1 (120178) ?201 2 microsemi corporation page 1 of 5 2n2857 available on commercial versions rf and microwave discrete low power transistors qualified per mil - prf - 19500/343 qualified levels : jan, jantx, and jantxv description the 2n2857 is a military qualified silicon npn transistor (also available in commercial version) , designed for uhf equipment and other high - reliability applications . common a pplications include low noise amplifier; oscillator, and mixer applications. microsemi als o offers numerous other products to meet higher and lower power voltage regulation applications. to - 72 package also available in : ub package ( surface mount ) 2n2857ub import ant: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n2857. ? silicon npn, t o- 72 packaged uhf t ransistor . ? maximum u nilateral g ain = 13 db (typ) @ 500 mhz . ? jan, jantx, and jantxv military qualified versions available per mil - prf - 19500/343. ? rohs compliant version available (commercial grade only) . applications / benefits ? low - power, ultra - high frequency transistor . ? leaded metal to - 72 package. maximum ratings @ t a = + 25 o c msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c collector - emitter voltage v ceo 15 v collector - base voltage v cbo 30 v emitter - base voltage v ebo 3 v thermal resistance junction - to - ambient r ? ja 400 o c /w steady - state power dissipation (1) p d 200 mw collector current i c 40 ma notes : 1. derate linearly 1.14 mw/c for t a > +25 c. downloaded from: http:///
t4 - lds - 0223, rev . 1 (120178) ?201 2 microsemi corporation page 2 of 5 2n2857 mechanical and packaging ? case: ni p lated k ovar, ni c ap. ? terminals: au over ni p lated k ovar leads, s old er dipped . ? marking: manufacturers id, d ate c ode, part n umber . ? polarity: see case outline on last page. ? weight: 0.322 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n 2857 (e3) reliabili ty level jan =jan level jantx =jan level jantxv=jantxv level blank = commercial jedec type number ( see electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol definition i c collector current (dc) . i b base current (dc) . t a ambient or free air temperature . t c case temperature. v cb collector to base voltage (dc) . v eb emitter to base voltage (dc) . downloaded from: http:///
t4 - lds - 0223, rev . 1 (120178) ?201 2 microsemi corporation page 3 of 5 2n2857 electrical characteristics @ t c = +25 o c off characteristics test conditions symbol value min. typ. max. unit collector - emitter breakdown voltage (i c = 3.0 ma, bias condition d ) v (br)ceo 15 - - v collector to emitter cutoff current (v ce = 16 v, bias condition c ) i ces - - 100 na emitter to base cutoff current (v eb = 3 v, bias condition d) i ebo - - 10 a collector to base cutoff current (v cb = 15 v , bias condition d) i cbo - - 10 na on characteristics test conditions symbol va lue min. typ. max. unit forward current transfer ratio (i c = 3.0 ma, v ce = 1.0 v) h fe 30 - 150 collector - emitter saturation voltage (i c = 10 ma, i b = 1 ma ) v ce(sat) - 0.4 v base- emitter saturation voltage (i c = 10 ma, i b = 1 ma ) v be(sat) - 1.0 v dynamic characteristics test conditions symbol value unit min. typ. max. magnitude of common emitter small signal short circuit forward current transfer ratio (v ce = 6 v, ic = 5 ma, f = 100 mhz ) |h fe | 10 - 21 collector - base time constant (i e = 2.0 ma, v cb = 6.0 v, f = 31.9 mhz) r b c c 4 - 15 pf collector to base C feedback capacitance (i e = 0 ma, v cb = 10 v, 100 khz < f < 1 mhz ) c cb 1.0 pf nois e figur e (5 0 ohms) (i c = 1.5 ma, v ce = 6 v, f = 450 mhz, r g = 50 ?) f 4.5 db small signal power gain (common emitter) (i e = 1.5 ma, v ce = 6 v, f = 450 mhz g pe 12.5 21 db downloaded from: http:///
t4 - lds - 0223, rev . 1 (120178) ?201 2 microsemi corporation page 4 of 5 2n2857 graphs time (sec) figure 1 maximum thermal impedance (r ja ) th(s) figure 2 thermal impedance graph (r jc ) theta ( o cw) r jc in deg c/w downloaded from: http:///
t4 - lds - 0223, rev . 1 (120178) ?201 2 microsemi corporation page 5 of 5 2n2857 package dimensio ns notes: 1. dimension are in inches. 2. millimeters are given for general information only. 3. beyond r (rad ius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (tp) at maximum material condition (mmc) relati ve to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. dim ension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all four leads. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with asme y14.5m, diameters are equivalent to x symbology. 11. lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connect ed). dimensions notes ltr inch millimeters min max min max tl .028 .048 .071 1.22 th .036 .046 .091 1.17 hd .209 .230 5.31 5.84 5 cd .178 .195 4.52 4.95 5 ld .016 .0 21 . 41 0 . 533 7, 8 lc .100 tp 2.54 tp 7, 8 ch .170 .210 4.32 5.33 ll .50 0 .750 12.70 19.05 7, 8 p .100 2.54 q .040 1.02 5 1 emitter 2 base 3 collector 4 case downloaded from: http:///
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